报告人：Assistant Professor Jingbiao Cui（崔景彪）Department of Physics and Astronomy, University of Arkansas at Little Rock
报告题目: Low temperature growth and characterization of ZnO nanostructures
时 间：2008年6月5日 （星期四）下午3：00
地 点：三号楼三楼会议室
Abstract Zinc oxide (ZnO) is an important direct- and wide-bandgap (3.37 eV) semiconductor and is of great interest for low-voltage and short-wavelength (ultraviolet/blue) electro-optical devices. Although high quality ZnO nanostructures have been obtained using both catalytically activated vapor phase processes at high temperature and hydrothermal growth at low temperature, controlled growth of ZnO is still a challenge. In addition, the p-type doing has been an unresolved problem for ZnO, which hampers its optoelectronic and electronic applications because the fabrication of these devices requires both n- and p-type doped materials. We recently developed a low temperature process to grow ZnO nanowire arrays using an electrochemical approach, which enhances the growth rate and nucleation density and shows potential for ZnO doping with different dopant materials such as transition metals. We demonstrated that individual ZnO nanowires with diameters around 100 nm could be precisely placed in desired locations to form two-dimensional periodic ordered structures. The highly ordered structures with a photonic bandgap in the visible region were fabricated by a combination of soft templates created by electron beam lithography and the electrochemical process. This approach is compatible with current micro-fabrication techniques and promising for large-scale production of ZnO nanostructures for optical and electronic applications.
Biography
Education
University of Science & Technology, Hefei, China Ph.D in Physics
University of Science & Technology, Hefei, China MS in Physics
Anhui University, Hefei, China BS in Physics
Work Experience
10/06 – present, Assistant Professor, Department of Physics and Astronomy, University of Arkansas at Little Rock
Synthesis and physical properties of semiconducting nanostructures
03/03–09/06, Research Scientist, Nanomaterials Research Center, Dartmouth College
Semiconducting nanostructures and nano devices
01/01–03/03, Guest Scientist, Nanoscale Science Department, Max-Planck-Institute for Solid State Research
Semiconducting nanowires and nanoelectronics
11/99–01/01, Research Associate, Electronic Materials and Devices Division, Department of Engineering, University of Cambridge
Growth and characterization of nanostructured carbon
05/97–09/99, Guest Researcher, Institute of Technical Physics, University of Erlangen-Nurnberg
Surface electronic and atomic structure of semiconducting diamond
01/94–05/97, Lecturer/associate professor, Department of Physics, University of Science & Technology of China
Synthesis and physical properties of CVD diamond thin films
Research Interest:
Synthesis of semiconducting nanostructures, their structural and physical properties including electrical, optical and magnetic properties, and potential applications in electronic and optoelectronic devices,
Patent list
1. K. Kern, M. Burghard, J.B. Cui. “Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell”, U.S. patent, 7,049,625 (2006.5.3).
2. R.C. Fang, Z. Ye, J.G. Xue, G. Wang, J.B. Cui, and C.H. Li. “Spatially resolved optical emission collectors for loop-control of diamond growth”, China patent ZL.99114278.0 (2003.11).
Selected Publications
1. J.B. Cui, “Defect control and its influence on exciton emission of electrodeposited ZnO nanorods”, Journal of Physical Chemistry C. in press (2008).
2. J.B. Cui, Y. C. Soo, T.P. Chen, and U. Gibson, “Low temperature growth and characterization of Cl-doped ZnO nanostructures”, Journal of Physical Chemistry C 112, 4475-4470 (2008).
3. J.B. Cui and U.J. Gibson, “Low temperature fabrication of single crystal ZnO nanopillar photonics bandgap structures”, Nanotechnology 18, 155302 (2007).
4. .B. Cui and U.J. Gibson, “Thermal modification of magnetism in Co-doped ZnO nanowires grown at low temperature”, Phys. Rev. B 74, 045416 (2006).
5. J.B. Cui and U.J. Gibson, “Enhanced nucleation, growth rate and dopant incorporation of ZnO nanowires”, J. Phys. Chem. B 109, 22074 (2005).
6. J.B. Cui and U.J. Gibson, “Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays”, Appl. Phys. Lett. 87, 133108 (2005).
7. J.B. Cui, C. Daghlian, and U. J. Gibson, “Gold nanoparticle mediated formation of aligned nanotube composite films”, J. Phys. Chem. B 109, 11456 (2005).
8. J.B. Cui, M. Burghard, and K. Kern. “Reversible sidewall osmylation of individual carbon nanotubes”, Nano Letters 3, 613 (2003).
9. J.B. Cui, R. Sordan, M. Burghard, and K. Kern. “Carbon nanotube memory devices of high charge storage stability”, Appl. Phys. Lett. 81, 3260 (2002).
10. J.B. Cui, M. Burghard, and K. Kern. “Room temperature single electron transistor by local chemical modification of carbon nanotubes”, Nano Letters 2, 117 (2002).
11. J.B. Cui, K.B.K. Teo, J.T.H. Tsai, J. Robertson and W.I. Milne. “The role of dc current limitations in Fowler-Nordheim electron emission from carbon films”, Appl. Phys. Lett. 77, 1831 (2000).
12. J.B. Cui, J. Ristein, and L. Ley. “Low threshold electron emission from diamond”, Phys. Rev. B23, 16135 (1999).
13. J.B. Cui, J. Ristein, and L. Ley. “Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure”, Phys. Rev. B59, 5847 (1999).
14. J.B. Cui, J. Ristein, L. Ley. “Electron affinity of the bare and hydrogenated diamond (111) surface”, Phys. Rev. Lett. 81, 429 (1998).
15. J.B. Cui and R.C. Fang. “Evidence of the role of bias in diamond growth by hot filament chemical vapor deposition”, Appl. Phys. Lett. 69, 3504 (1996).
